Label Value
DOI 10.1134/S1063783415090218
TITLE Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
TYPE article
PUBLICATION DATE
Service Status Date Last Checked
Scopus Yes 2017-01-13T19:49:26.503547+00:00
Web of Science Yes 2018-04-08T16:03:14.499534
Compendex No 2020-10-15T19:02:11.538259